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Updated: Mar 11, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Progress in the materials science of silicene
Yukiko Yamada-Takamura1, Rainer Friedlein1
1School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1, Asahidai, Nomi, Ishikawa 923-1292, Japan.
Abstract:
In its freestanding, yet hypothetical form, the Si counterpart of graphene called silicene is predicted to possess massless Dirac fermions and to exhibit an experimentally accessible quantum spin Hall effect. Such interesting electronic properties are not realized in two-dimensional (2D) Si honeycomb lattices prepared recently on metallic substrates where the crystal and hybrid electronic structures of these 'epitaxial silicene' phases are strongly influenced by the substrate, and thus different from those predicted for isolated 2D structures. While the realization of such low-dimensional Si π materials has hardly been imagined previously, it is evident that the materials science behind silicene remains challenging. In this contribution, we will review our recent results that lead to an enhanced understanding of epitaxial silicene formed on diboride thin films, and discuss the remaining challenges that must be addressed in order to turn Si 2D nanostructures into technologically interesting nanoelectronic materials.

