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Published on: August 20, 2019
Depletion region surface effects in electron beam induced current measurements
Paul M Haney1, Heayoung P Yoon2, Benoit Gaury3
1Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Electron beam induced current (EBIC) models for solar cells are improved by accounting for surface recombination. This study reveals reduced charge collection efficiency in depletion regions, particularly for charged surfaces in silicon cells.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Electron beam induced current (EBIC) is crucial for high-resolution characterization of polycrystalline solar cells.
- Existing EBIC models assume perfect charge collection efficiency in the p-n junction depletion region.
- Focused ion beam (FIB) milling preparation can introduce surface effects impacting EBIC measurements.
Purpose of the Study:
- To investigate the reduced and nonuniform EBIC lineshape observed for excitations within the depletion region of CdTe and Si solar cells prepared by FIB milling.
- To develop an improved EBIC model that incorporates surface recombination effects.
- To analyze the influence of neutral and charged surfaces on EBIC response.
Main Methods:
- Utilized focused ion beam (FIB) milling for sample preparation of CdTe and Si solar cells.
- Developed a new EBIC model accounting for surface recombination from neutral and charged surfaces.
- Analyzed experimental EBIC lineshape data from FIB-prepared silicon solar cells.
Main Results:
- Observed reduced and nonuniform EBIC lineshapes in the depletion region of FIB-milled CdTe and Si samples.
- Proposed an analytical formula for EBIC response from neutral surfaces.
- Determined that experimental data for Si solar cells aligns best with a charged surface model.
Conclusions:
- Surface recombination significantly affects EBIC measurements in the depletion region, contrary to previous assumptions.
- The presence of charged surfaces, influenced by Fermi level alignment, plays a critical role in EBIC response.
- This refined understanding is vital for accurate EBIC characterization of polycrystalline solar cells and other semiconductor devices.
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