Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations

Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS₂ and WS₂ have successfully been fabricated on SiO₂ substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS₂ monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer is about 0.86 cm²/V·s. The crystalline flakes of WS₂ are also fabricated extending from the metal patterns and the electron mobility of these flakes is up to 11.36 cm²/V·s.