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Updated: Mar 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Alexander Yulaev1, Guangjun Cheng2, Angela R Hight Walker2
1Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD 20899, USA; Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA; Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
A new method uses anthracene as a sacrificial layer for clean graphene transfer, crucial for applications like electron microscopy and sensitive devices. This anthracene-assisted technique yields superior suspended graphene quality compared to existing methods.
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