Precisely Aligned Monolayer MoS₂ Epitaxially Grown on h-BN basal Plane

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Precise lattice alignment of 2D materials on substrates is crucial for advanced electronic and optical applications.
• Monolayer molybdenum disulfide (MoS₂) on hexagonal boron nitride (h-BN) heterostructures offer unique properties but achieving controlled alignment remains a challenge.

Purpose of the Study:

• To develop a method for precisely controlling the lattice alignment of monolayer MoS₂ on h-BN.
• To investigate the domain stitching and grain boundary formation in MoS₂/h-BN heterostructures.

Main Methods:

• Low-pressure chemical vapor deposition (LPCVD) technique was employed for the growth of MoS₂ on h-BN.
• Analysis of relative rotation angles between MoS₂ and h-BN domains.

Main Results:

• Achieved exclusive relative rotation angles of 0° or 60° between MoS₂ and h-BN basal planes.
• Demonstrated that domains with identical orientations form single crystals, while domains with different orientations form mirror grain boundaries.
• Obtained a continuous MoS₂ film with minimized grain boundaries through controlled domain stitching.

Conclusions:

• The developed LPCVD strategy enables precise control over MoS₂ lattice alignment on h-BN.
• This method facilitates the formation of continuous 2D material films with reduced defects.
• The growth strategy is adaptable for other 2D materials, paving the way for novel heterostructure fabrication.