Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Fabrication of Catalytic Distillation Membranes with Atomic Layer Deposition.

ACS applied materials & interfaces·2026
Same author

Strain in Metal Halide Perovskite Thin Films - Interfacial Mechanical Coupling.

ACS energy letters·2026
Same author

Impact of reforms and work environment on resident time allocation in a Swiss internal medicine division: a time motion study with a before-and-after comparison.

Swiss medical weekly·2026
Same author

Nanoscale elemental mapping reveals the effect of light and temperature on Gephyrocapsa huxleyi coccoliths.

Journal of phycology·2026
Same author

Structure of Layers Formed by [2-(3,6-Disubstituted-9<i>H</i>-carbazol-9-yl)ethyl]phosphonic Acids on Metal Oxides.

ACS applied materials & interfaces·2026
Same author

Solution-state nanoconfined aggregation and microstructure evolution in blends of conjugated polymers and elastomers.

Proceedings of the National Academy of Sciences of the United States of America·2026

Related Experiment Video

Updated: Mar 10, 2026

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
08:49

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

14.9K

Growth of Highly Strained CeO2 Ultrathin Films.

Yezhou Shi1,2, Sang Chul Lee1,2, Matteo Monti1,2

  • 1Department of Materials Science and Engineering and ‡Department of Applied Physics, Stanford University , Stanford, California 94305, United States.

ACS Nano
|December 10, 2016
PubMed
Summary

Ultrathin ceria (CeO2) films on yttria-stabilized zirconia (YSZ) maintain large biaxial strain up to 2.7 nm. Strain relaxation occurs via surface islands, not interface dislocations, enabling new material properties.

Keywords:
ceriadislocationstrainyttria-stabilized zirconia

More Related Videos

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
09:45

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

12.9K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.7K

Related Experiment Videos

Last Updated: Mar 10, 2026

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
08:49

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

14.9K
Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
09:45

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

12.9K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.7K

Area of Science:

  • Materials Science
  • Thin Film Physics
  • Solid State Chemistry

Background:

  • Large biaxial strain in oxide thin films can tune functionalities.
  • Misfit dislocations at the film/substrate interface often limit achievable strain.

Purpose of the Study:

  • To investigate the growth of strained ceria (CeO2) thin films on yttria-stabilized zirconia (YSZ).
  • To determine the critical thickness for coherent strain and understand strain relaxation mechanisms.

Main Methods:

  • Pulsed-laser deposition of ceria films with varying thicknesses (1-430 nm) on (001) YSZ.
  • X-ray diffraction and high-resolution transmission electron microscopy for structural analysis.
  • In situ reflective high-energy electron diffraction and atomic force microscopy for growth mode analysis.

Main Results:

  • Ultrathin ceria films (up to 2.7 nm) remain coherently strained to the YSZ substrate, exceeding predicted critical thickness.
  • Strain relaxation occurs through semirelaxed surface islands, not direct interface dislocation nucleation.
  • A transition from 2-D layer-by-layer to 3-D island growth occurs around 1 nm thickness.
  • 60° dislocations are observed, suggesting nucleation near surface islands.

Conclusions:

  • Coherent strain is maintained in ultrathin ceria films on YSZ beyond theoretical limits.
  • Surface island formation is a key mechanism for partial strain relaxation.
  • Understanding strain and dislocation behavior in mismatched films is crucial for tailoring ionic transport and redox properties.