Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy
Hirofumi Matsuhata1,2,3, Naoyuki Sugiyama1,4, Bin Chen1,2,5,6
1R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.
Abstract:
Surface defects on 4H-SiC wafers with an epitaxial layer grown by chemical vapor deposition (CVD) were observed using scanning electron microscopy (SEM). Commercially available epitaxial-wafers with four or eight deg-off surface from the [0001] toward the [112¯0] directions were used for this experiment. 3C-SiC particles, triangular-defects, comets, obtuse-triangular-shaped-defects and micro-holes were identified in the SEM images. This paper can be considered as a catalog of SEM images and descriptions of various surface defects for 4H-SiC wafers with a CVD-grown epilayer.
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