Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Kirkendall effect induced ultrafine VOOH nanoparticles and their transformation into VO<sub>2</sub>(M) for energy-efficient smart windows.

Materials horizons·2023
Same author

The hydrothermal synthesis of ultra-high aspect ratio Ag nanoflakes and their performance as conductive fillers in heaters and pastes.

RSC advances·2022
Same author

A Submicrosecond-Response Ultraviolet-Visible-Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe<sub>3</sub>.

ACS nano·2022
Same author

Synthesis and luminescence properties of cubic-shaped Ca<sub>1-x</sub> TiO<sub>3</sub> :Eu<sup>3+</sup> particles.

Luminescence : the journal of biological and chemical luminescence·2018
Same author

Ultrahigh Detectivity and Wide Dynamic Range Ultraviolet Photodetectors Based on Bi<sub>x</sub>Sn<sub>1-x</sub>O<sub>2</sub> Intermediate Band Semiconductor.

ACS applied materials & interfaces·2017
Same author

Electrochemical Synthesis of Amorphous VO<sub>2</sub> Colloids and Their Rapid Thermal Transforming to VO<sub>2</sub> (M) Nanoparticles with Good Thermochromic Performance.

Chemistry (Weinheim an der Bergstrasse, Germany)·2016

Related Experiment Video

Updated: Mar 10, 2026

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

15.2K

Metal oxide semiconductor SERS-active substrates by defect engineering.

Hao Wu1, Hua Wang2, Guanghai Li2

  • 1Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, P. R. China. ghli@issp.ac.cn.

The Analyst
|December 13, 2016
PubMed
Summary

Defect engineering transforms non-SERS active metal oxide semiconductors into highly sensitive SERS substrates. Introducing oxygen vacancies significantly enhances the SERS enhancement factor, enabling sensitive detection of various analytes.

More Related Videos

Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

10.2K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Related Experiment Videos

Last Updated: Mar 10, 2026

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

15.2K
Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

10.2K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Spectroscopy

Background:

  • Metal oxide semiconductors typically lack Surface-Enhanced Raman Spectroscopy (SERS) activity.
  • Developing cost-effective and stable SERS substrates is crucial for sensitive chemical detection.
  • Defect engineering offers a potential pathway to enhance material properties.

Purpose of the Study:

  • To establish a general method for converting non-SERS active metal oxides into SERS-active materials.
  • To investigate the role of oxygen vacancy defects in enhancing SERS performance.
  • To propose a model for understanding the charge transfer mechanism in SERS.

Main Methods:

  • Introduced oxygen vacancy defects into metal oxide semiconductors (e.g., α-MoO3, V2O5) via defect engineering.
  • Fabricated α-MoO3-x nanobelts with varying oxygen vacancy concentrations.
  • Utilized an 'effective electric current model' to describe photo-induced charge transfer.
  • Validated the model by comparing calculated SERS enhancement factors with experimental results for analytes like R6G, 4-MBA, and MB.

Main Results:

  • Achieved a high SERS enhancement factor (EF) of 1.8 × 10^7 for R6G on α-MoO3-x nanobelts, with a detection limit of 10^-8 M.
  • Demonstrated that SERS performance can be tuned by controlling oxygen vacancy concentration and laser wavelength.
  • The proposed 'effective electric current model' accurately predicted experimental SERS enhancement factors.
  • Identified potential new metal oxide semiconductor SERS substrates using the developed model.

Conclusions:

  • Defect engineering, specifically introducing oxygen vacancies, is an effective strategy to create highly SERS-active metal oxide semiconductor substrates.
  • The developed model provides a mechanistic understanding of the SERS process in these materials.
  • These engineered metal oxide semiconductors offer stable, biocompatible, and high-performance alternatives to noble metal SERS substrates.