MoS₂ Field-Effect Transistor with Sub-10 nm Channel Length.

Area of Science:

• Materials Science
• Nanotechnology
• Semiconductor Physics

Background:

• Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor for ultrashort-channel field-effect transistors (FETs) due to its properties.
• Challenges in nanofabrication and high contact resistance have hindered experimental realization of MoS2 FETs at the sub-10 nm scale.

Purpose of the Study:

• To demonstrate the fabrication of sub-10 nm channel-length transistors using MoS2.
• To overcome the limitations of current MoS2 transistor technology through innovative fabrication methods.

Main Methods:

• Utilized the semiconducting-to-metallic phase transition of MoS2.
• Employed directed self-assembly patterning of mono- and trilayer MoS2.
• Fabricated a 7.5 nm half-pitch periodic chain of transistors with integrated metallic contacts.

Main Results:

• Successfully fabricated transistors with a 7.5 nm channel length.
• Achieved a low off-current of 10 pA/μm and an on/off current ratio exceeding 10^7.
• Demonstrated a subthreshold swing of 120 mV/dec.

Conclusions:

• The study presents a viable method for fabricating sub-10 nm MoS2 FETs, addressing key technological hurdles.
• The results highlight the significant potential of 2D MoS2 for next-generation semiconductor technology nodes.
• Device transport modeling supports the experimental findings and future scalability.