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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Electronic structures and transport properties of a MoS2-NbS2 nanoribbon lateral heterostructure
Zhixiong Yang1, Jiangling Pan2, Qi Liu2
1Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, People's Republic of China. ouyangfp06@tsinghua.org.cn.
Abstract:
Lateral heterostructures built from an armchair MoS2 nanoribbon (AMoS2NR) and an armchair NbS2 nanoribbon (ANbS2NR) were studied based on first-principles calculations and a non-equilibrium Green's function method. It is found that the work function of the AMoS2NR shows substantial oscillation with increasing nanoribbon width, which is different from the work functions of other kinds of nanoribbons. The AMoS2NR-ANbS2NR lateral heterostructure exhibits an anomalous transport gap that is much larger than the bandgap of the AMoS2NR. As a result, a field effect transistor with AMoS2NR as the channel and ANbS2NRs as electrodes has high on-off ratios of 106-107 and a tiny leakage current of the order of 10-8 μA. These results suggest that lateral metal-semiconductor heterostructures of transition metal dichalcogenides may have potential applications in nanodevices with low energy consumption.
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