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Slow passage through thresholds in quantum dot lasers.

E A Viktorov1,2,3, T Erneux2, E D Kolykhalova4

  • 1National Research University of Information Technologies, Mechanics and Optics, Saint Petersburg, Russia.

Physical Review. E
|December 15, 2016
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Summary
This summary is machine-generated.

Quantum dot semiconductor lasers operating on ground (GS) and excited (ES) states show delayed turn-on times. Theoretical analysis reveals power-law dependencies for GS and ES turn-on times on pump rate changes.

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Area of Science:

  • Quantum optics
  • Semiconductor lasers
  • Materials science

Background:

  • Quantum dot (QD) lasers offer unique properties for optoelectronic applications.
  • Simultaneous lasing at ground state (GS) and excited state (ES) presents complex dynamics.
  • Understanding turn-on dynamics is crucial for laser performance optimization.

Purpose of the Study:

  • To experimentally and theoretically investigate the turn-on dynamics of QD lasers operating at GS and ES.
  • To analyze the influence of pump rate change on the turn-on times.
  • To elucidate the distinct physical mechanisms governing GS and ES turn-on.

Main Methods:

  • Experimental measurements of GS and ES turn-on delays under varying pump rates.
  • Theoretical modeling using rate equations for two-state lasing QD lasers.
  • Analysis of power-law relationships between turn-on times and pump rate change (ɛ).

Main Results:

  • Experimentally observed significant delays in GS and ES turn-on due to slow passage through thresholds.
  • Identified an ɛ^{-1/2} power law for effective GS turn-on time (for non-small ɛ).
  • Determined an ɛ^{-1} power law for ES transition time, with significant logarithmic corrections.

Conclusions:

  • The turn-on mechanisms for GS and ES lasing are physically distinct.
  • GS turn-on delay is dominated by the slow increase in QD population.
  • ES turn-on delay is primarily determined by the time required to escape a repellent steady state.