Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

1.9K
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
1.9K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Valence Bond Theory02:42

Valence Bond Theory

11.5K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.5K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

735
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
735
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

924
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
924
Fermi Level Dynamics01:12

Fermi Level Dynamics

883
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
883

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Giant photoconductance at infinite-layer nickelate/SrTiO<sub>3</sub> interfaces via an optically induced high-mobility electron gas.

Nature materials·2025
Same author

Terahertz Electronic and Spin Currents in Wafer-Scale Van der Waals Bi<sub>2</sub>Se<sub>3</sub>/WSe<sub>2</sub> Heterostructures and Polymorphs.

Advanced materials (Deerfield Beach, Fla.)·2025
Same author

Scaling and networking a modular photonic quantum computer.

Nature·2025
Same author

Incoherent phenomena in anisotropic periodic structures: from modeling to experimental demonstration.

Optics express·2024
Same author

Clinical-Hematological Changes and Predictors of Severity in Acute Food Protein-Induced Enterocolitis Syndrome Reactions at Oral Food Challenge: A Multicenter Observational Study.

The journal of allergy and clinical immunology. In practice·2024
Same author

Local allergic rhinitis in children: Clinical characteristics and role of basophil activation test as a diagnostic tool.

International journal of pediatric otorhinolaryngology·2023
Same journal

Kat5 deficiency in alveolar type II cells licenses STAT6-driven glycolytic reprogramming and pulmonary fibrosis.

Nature communications·2026
Same journal

Continuous nonthermal slab gap formed by progressive tearing beneath Northeast Asia.

Nature communications·2026
Same journal

Zeolitic isolated protonic acid sites-mediated NH<sub>3</sub> storage for robust NO<sub>x</sub> removal.

Nature communications·2026
Same journal

Coaxially nested component with asymmetric fiber resonant cavity and separation membrane for gaseous and dissolved gases detection.

Nature communications·2026
Same journal

Near-unity charge readout signal in a nonlinear resonator without matching the sensor dissipation.

Nature communications·2026
Same journal

Prokaryotic Schlafen proteins cleave tRNAs during type III CRISPR immunity.

Nature communications·2026
See all related articles

Related Experiment Video

Updated: Mar 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K

Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface.

S Oyarzún1,2,3, A K Nandy4, F Rortais1,2

  • 1Institut des Nanosciences et l'Energie Atomique et Cryogénie, INAC, Commissariat á aux Energies Alternatives-Univ. Grenoble Alpes, 17 rue des Martyrs, F-38000 Grenoble, France.

Nature Communications
|December 16, 2016
PubMed
Summary
This summary is machine-generated.

Giant spin-to-charge conversion was achieved at Fe/Ge(111) interfaces, leveraging Rashba coupling for potential spin field-effect transistors. This overcomes limitations of bulk germanium for efficient spin current generation.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.3K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K

Related Experiment Videos

Last Updated: Mar 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.3K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K

Area of Science:

  • Spintronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Spin-orbit coupling enables spin generation, detection, and manipulation, crucial for spin field-effect transistors.
  • Bulk germanium exhibits weak spin Hall effect, limiting spin current generation.
  • Heavy metal-covered Ge(111) surfaces show significant Rashba effect, enabling spin-polarized currents.

Purpose of the Study:

  • To demonstrate giant spin-to-charge conversion at the Fe/Ge(111) interface.
  • To explore the potential of Rashba coupling in Fe/Ge(111) for spintronic applications.
  • To overcome limitations of bulk germanium for spin current generation.

Main Methods:

  • First-principles electronic structure calculations to confirm metallic interface states.
  • Experimental generation of charge currents via spin pumping into interface states.
  • Temperature-dependent measurements from 20 K to room temperature.

Main Results:

  • Observed giant spin-to-charge conversion at the Fe/Ge(111) interface due to Rashba coupling.
  • Generated substantial charge currents by direct spin pumping into interface states.
  • Confirmed the presence of metallic states at the Fe/Ge(111) interface through calculations.

Conclusions:

  • The Fe/Ge(111) interface exhibits metallic states with strong Rashba coupling, enabling efficient spin-to-charge conversion.
  • This interface is a promising platform for developing spin field-effect transistors.
  • Leveraging spin-orbit coupling at interfaces offers a viable route for advanced spintronic devices.