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II-VI Quantum Cascade emitters in the 6-8μm range.

Thor A Garcia1, Joel De Jesus2, Arvind P Ravikumar3

  • 1Department of Chemistry, The City College of New York, 85 St. Nicolas Terrace, New York, New York 10031 USA; The Graduate Center, City University of New York, New York, New York 10016, USA.

Physica Status Solidi. B, Basic Solid State Physics : PSS
|December 20, 2016
PubMed
Summary
This summary is machine-generated.

Researchers developed novel ZnCdSe/ZnCdMgSe quantum cascade (QC) heterostructures for mid-infrared applications. These structures exhibit good material properties and electroluminescence up to room temperature, paving the way for advanced optoelectronic devices.

Keywords:
II-VIMid-IRQuantum Cascade LasersSemiconductor Lasers

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Area of Science:

  • Semiconductor Physics
  • Optoelectronics
  • Materials Science

Background:

  • Quantum cascade (QC) heterostructures are crucial for optoelectronic devices.
  • Previous ZnCdMgSe compositions had higher bandgaps, limiting specific applications.
  • Lattice-matched InP substrates offer improved material quality.

Purpose of the Study:

  • To grow and characterize ZnCdSe/ZnCdMgSe QC heterostructures for 6-8μm operation.
  • To investigate the structural and optical properties of the novel heterostructures.
  • To assess the electroluminescent performance of fabricated devices.

Main Methods:

  • Molecular beam epitaxy (MBE) for heterostructure growth.
  • X-ray diffraction (XRD) and photoluminescence (PL) for structural and optical characterization.
  • Fabrication of mesa devices for electrical and electroluminescence measurements.

Main Results:

  • Successfully grown ZnCdSe/ZnCdMgSe heterostructures with good structural and optical properties.
  • Fabricated devices demonstrated a turn-on voltage of 11V and differential resistance of 3.6 Ω.
  • Electroluminescence observed at 7.1 μm up to room temperature with a spectral width of ~16% at 80K.

Conclusions:

  • The developed ZnCdSe/ZnCdMgSe QC heterostructures are well-behaved electroluminescent devices.
  • The use of lattice-matched ZnCdMgSe compositions with a 2.80 eV bandgap is effective.
  • Further optimization, including waveguide integration, is needed to achieve lasing.