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Critical Behavior in Doping-Driven Metal-Insulator Transition on Single-Crystalline Organic Mott-FET

Yoshiaki Sato1, Yoshitaka Kawasugi1, Masayuki Suda1,2

  • 1RIKEN, Hirosawa, Wako, Saitama 351-0198, Japan.

Nano Letters
|December 31, 2016
PubMed

Keywords:
Hall effectMott transitionSAM patterningfield-effect transistormetal−insulator transitionquantum critical scaling

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