Tin Compensation for the SnS Based Optoelectronic Devices

Area of Science:

• Materials Science
• Solid State Physics

Background:

• Tin sulfide (SnS) is a promising material for electronic applications.
• Achieving high-quality SnS films with controlled properties is challenging.
• Lattice mismatch often hinders the deposition of high-quality thin films.

Purpose of the Study:

• To grow high-quality SnS thin films on 2D mica substrates.
• To investigate the effect of Sn-compensation on SnS properties.
• To fabricate and characterize SnS/GaN:Si heterojunctions.

Main Methods:

• Deposition of SnS thin films on mica substrates.
• Utilizing a Sn-compensation technique during film growth.
• Characterization using X-ray diffraction (XRD) and electrical measurements.
• Fabrication and testing of SnS/GaN:Si heterojunction devices.

Main Results:

• High-quality SnS films with good crystallinity were obtained on mica.
• Sn-compensation reduced Sn vacancies, enhancing electrical and structural properties.
• Achieved mobility of 51 cm² V⁻¹ s⁻¹ and XRD rocking curve FWHM of 0.07°.
• Improved I-V characteristics and spectral responsivities in SnS/GaN:Si heterojunctions.

Conclusions:

• The 2D nature of SnS and mica substrates facilitate high-quality film growth.
• Sn-compensation is an effective method for improving SnS properties.
• SnS-based heterojunctions show potential for enhanced device performance.