Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics
Zhiwei Chen1, Binghui Ge2, Wen Li1
1Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China.
This study introduces vacancy engineering to create dislocations in thermoelectric materials, significantly reducing thermal conductivity and enhancing thermoelectric performance. This novel approach offers a promising strategy for improving energy conversion efficiency.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Minimizing lattice thermal conductivity is crucial for efficient thermoelectric materials.
- Current strategies involve scattering phonons using interfaces and point defects.
- Scattering mid-frequency phonons via dislocations at grain boundaries also improves thermoelectric performance.
Purpose of the Study:
- To propose and investigate a vacancy engineering strategy for creating dense dislocations within grains.
- To reduce lattice thermal conductivity and enhance the thermoelectric figure of merit (zT) in solid solutions.
Main Methods:
- Introduced cation vacancies in Pb1-xSb2x/3Se solid solutions.
- Utilized thermal annealing to annihilate vacancies, forming dislocations homogeneously within grains.
- Measured lattice thermal conductivity and thermoelectric figure of merit.
Main Results:
- Achieved a significantly low lattice thermal conductivity of 0.4 W m⁻¹ K⁻¹.
- Demonstrated a high thermoelectric figure of merit.
- Explained results using a dislocation scattering model.
Conclusions:
- Vacancy engineering is an effective strategy for creating dislocations and reducing thermal conductivity in thermoelectrics.
- This method homogeneously distributes dislocations within grains, enhancing thermoelectric performance.
- The proposed strategy is applicable to various solid solution thermoelectrics for improved zT.
More Related Videos
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
08:00Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
Imperfections in Crystal Structure: Point, Line and Plane Defects
