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Updated: Mar 9, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.

Junfeng He1,2, Chaofan Zhang1,2, Nirmal J Ghimire3

  • 1Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.

Physical Review Letters
|January 7, 2017
PubMed
Summary

Extreme magnetoresistance (XMR) in YSb arises from moderate carrier compensation and differing electron/hole mobility, not topological protection. This finding offers a new perspective on XMR mechanisms in semimetals.

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