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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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A Distance Detector with a Strip Magnetic MOSFET and Readout Circuit.

Guo-Ming Sung1, Wen-Sheng Lin2, Hsing-Kuang Wang3

  • 1Department of Electrical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan. gmsung@ntut.edu.tw.

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Summary
This summary is machine-generated.

This study introduces a novel distance detector using MOSFETs and a Hall plate, enhancing magnetic sensitivity and reducing offset voltage. Proper grounding is crucial to prevent electrostatic discharge (ESD) interference and ensure accurate measurements.

Keywords:
Hall effectdifference amplifierdistance detectorinstrumentation amplifiermagnetic sensorpolysilicon cross-shaped Hall platereadout circuitstrip MAGFET

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Area of Science:

  • Electrical Engineering
  • Solid-State Physics
  • Sensor Technology

Background:

  • Traditional magnetic sensors can suffer from offset voltages and limited sensitivity.
  • Electrostatic discharge (ESD) poses a significant challenge to the reliability of electronic sensors.
  • Accurate distance detection is crucial in various applications, requiring robust sensor designs.

Purpose of the Study:

  • To develop a highly sensitive and offset-free distance detector using CMOS technology.
  • To investigate the impact of electrostatic discharge (ESD) on sensor performance and propose mitigation strategies.
  • To optimize the readout circuitry for enhanced signal amplification and accurate magnetic field detection.

Main Methods:

  • Fabrication of a distance detector using 0.18 μm 1P6M CMOS technology.
  • Integration of two MOSFETs and a differential polysilicon cross-shaped Hall plate (CSHP).
  • Design of a readout circuit including a current-to-voltage converter, low-pass filter, and difference amplifier.

Main Results:

  • The differential polysilicon CSHP increased magnetosensitivity and eliminated offset voltage.
  • MOSFETs generated drain currents quadratically related to differential Hall voltages.
  • Grounding the sensor to earth eliminated ESD interference, while ungrounded or power-supply-grounded configurations were unsuitable.

Conclusions:

  • The developed CMOS distance detector offers improved magnetosensitivity and offset voltage elimination.
  • Proper grounding is essential for reliable sensor operation, preventing ESD-induced desensitization.
  • The sensor is suitable for applications where magnetic influence is minimal and proper grounding is maintained.