Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

735
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
735
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.4K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.4K
Secondary Active Transport01:32

Secondary Active Transport

12.4K
One example of how cells use the energy contained in electrochemical gradients is demonstrated by glucose transport into cells. The ion vital to this process is sodium (Na+), which is typically present in higher concentrations extracellularly than in the cytosol. Such a concentration difference is due, in part, to the action of an enzyme "pump" embedded in the cellular membrane that actively expels Na+ from a cell. Importantly, as this pump contributes to the high concentration of...
12.4K
Carrier Transport01:21

Carrier Transport

1.1K
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Charge transport through linear carbon atomic chains.

Nature chemistry·2026
Same author

Ice nucleation by DNA origami.

Nanoscale·2025
Same author

Metal ion independent conductance through bis-chelated metal complex molecular wires based on a bis(diphenylphosphino)aniline derivative.

Dalton transactions (Cambridge, England : 2003)·2025
Same author

Digging through the (Statistical) Dirt: A Reproducible Method for Single-Molecule Flicker Noise Analysis.

The journal of physical chemistry. C, Nanomaterials and interfaces·2025
Same author

Single-Molecule Mechanoresistivity by Intermetallic Bonding.

Angewandte Chemie (International ed. in English)·2024
Same author

Zero-Bias Anti-Ohmic Behaviour in Diradicaloid Molecular Wires.

Angewandte Chemie (International ed. in English)·2024

Related Experiment Video

Updated: Mar 8, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K

Single-Molecule Transport at a Rectifying GaAs Contact.

Andrea Vezzoli1, Richard J Brooke2, Nicolò Ferri1

  • 1Department of Chemistry, University of Liverpool , Crown Street, Liverpool L69 7ZD, United Kingdom.

Nano Letters
|January 13, 2017
PubMed
Summary

Researchers developed a novel single-molecule device using metal and semiconductor contacts to achieve current rectification. This advancement expands the capabilities of single-molecule electronics by enabling contact-based functionality.

Keywords:
STMSchottky diodegallium arseniderectificationsingle molecule junctions

More Related Videos

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Related Experiment Videos

Last Updated: Mar 8, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Area of Science:

  • Molecular electronics
  • Nanotechnology
  • Condensed matter physics

Background:

  • Traditional single-molecule devices utilize simple ohmic contacts.
  • Limited functionality is often observed in existing molecular junctions.
  • Contact electrodes typically do not contribute functional properties.

Purpose of the Study:

  • To introduce a new single-molecule device architecture.
  • To demonstrate current rectification imparted by contact electrodes.
  • To investigate the modification of rectification by bridging molecules.

Main Methods:

  • Fabrication of single-molecule junctions with Au STM tip/X/n-GaAs substrate structure.
  • Utilizing alkanedithiol or conjugated molecules as bridging elements (X).
  • Detection of current jumps during single-molecule attachment and detachment.

Main Results:

  • Observed current rectification due to metal and semiconductor contacts.
  • Measured conductance decay constants with molecule length.
  • Agreement of results with previous studies on Au/molecule/Au junctions.

Conclusions:

  • Metal and semiconductor contacts can impart functional properties, such as rectification, to single-molecule devices.
  • This approach enhances the functionality of molecular junctions beyond the bridging molecule's properties.
  • Represents a significant advancement in the single-molecule electronics toolkit.