High-Performance Electron Field Emitters and Microplasma Cathodes Based on Conductive Hybrid Granular Structured...

Area of Science:

• Materials Science
• Nanotechnology
• Physics

Background:

• Diamond electron field emitters (EFEs) are crucial for advanced electronic devices.
• Existing carbon- and semiconductor-based EFEs face limitations in stability and performance.
• Improving diamond EFE properties requires addressing interfacial resistance and bulk conductivity.

Purpose of the Study:

• To synthesize high-performance diamond EFEs with enhanced field emission properties.
• To investigate methods for improving the stability and conductivity of diamond films for EFEs.
• To explore the potential of these enhanced diamond EFEs in display and microplasma technologies.

Main Methods:

• Modified two-step microwave plasma chemical deposition process.
• Application of high bias voltage during ultrananocrystalline diamond (UNCD) primary layer preparation.
• Subsequent plasma post-treatment (PPT) of the diamond films.

Main Results:

• Achieved extremely low turn-on field (1.72 V/μm) and high current density (1.70 mA/cm² at 3.86 V/μm).
• Demonstrated significantly improved lifetime stability compared to existing EFE materials.
• Reduced diamond-to-silicon interfacial resistance and increased bulk diamond film conductivity (HBD_{-400 ext{ V}).

Conclusions:

• The developed diamond EFEs exhibit performance comparable to carbon- and semiconductor-based materials but with superior stability.
• The enhanced EFE behavior is attributed to reduced interfacial resistance and improved bulk conductivity.
• These diamond materials show great potential for high brightness display and multifunctional microplasma applications.