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Updated: Mar 8, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Improve optics fabrication efficiency by using a radio frequency ion beam figuring tool.
Researchers developed a radio frequency (RF) ion source to improve ion beam figuring. This new RF ion source achieves a high ion beam removal rate of 193 nm/min with a 10 mm extraction grid opening.
Area of Science:
- Optics and Photonics
- Plasma Physics
- Materials Science
Background:
- Ion beam figuring requires high removal rates and small ion beam diameters.
- Reducing extraction grid openings decreases ion beam diameter but also lowers removal rates.
- Ion beam removal rate is significantly influenced by ion density within the ion source.
Purpose of the Study:
- To investigate methods for enhancing ion beam figuring performance.
- To compare ion density in hollow cathode (HC) and radio frequency (RF) ion sources.
- To develop and test a novel RF ion source for improved ion beam characteristics.
Main Methods:
- Plasma simulation of hollow cathode (HC) and radio frequency (RF) ion sources.
- Development of an RF ion source with an integrated matching network.
- Experimental testing of the developed RF ion source for ion beam removal rate and diameter.
Main Results:
- Simulations indicated higher ion density in the RF ion source compared to the HC ion source.
- The developed RF ion source achieved an ion beam removal rate of 193 nm/min.
- This performance was achieved with a 10 mm extraction grid opening.
Conclusions:
- The RF ion source demonstrates superior performance for ion beam figuring compared to HC sources.
- The developed RF ion source design effectively increases ion density, leading to higher removal rates.
- This technology offers a promising solution for achieving high-precision material removal in optical fabrication.
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