Related Experiment Video
Updated: Mar 8, 2026
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Nb/InAs nanowire proximity junctions from Josephson to quantum dot regimes
Kaveh Gharavi1,2, Gregory W Holloway1,2,3, Ray R LaPierre4
1Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
None:
The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies [Formula: see text] are observed. The electronic phase coherence length at low temperatures exceeds the channel length. However, the elastic scattering length is a few times shorter than the channel length. Electrical measurements reveal two regimes of quantum transport: (i) the Josephson regime, characterised by a dissipationless current up to ∼100 nA, and (ii) the quantum dot (QD) regime, characterised by the formation of Andreev bound states (ABS) associated with spontaneous QDs inside the nanowire channel. In regime (i), the behaviour of the critical current I c versus an axial magnetic field [Formula: see text] shows an unexpected modulation and persistence to fields [Formula: see text] T. In the QD regime, the ABS are modelled as the current-biased solutions of an Anderson-type model. The applicability of devices in both transport regimes to Majorana fermion experiments is discussed.
Related Concept Videos
01:24Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
01:11P-N junction
01:27Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:16Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
01:22Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
01:26Chemical Synapses
Because chemical synapses depend on the release of neurotransmitter molecules from synaptic vesicles to pass on their signal, there is an approximately one millisecond delay between when the axon potential reaches the presynaptic terminal and when the neurotransmitter leads to opening of postsynaptic ion channels. Additionally, this signaling is...