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Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films
J C Gallagher1, K Y Meng1, J T Brangham1
1Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
Physical Review Letters
|January 28, 2017
Summary
Researchers stabilized magnetic Skyrmions in iron-germanium (FeGe) films at room temperature and zero magnetic field. This breakthrough in B20 phase materials demonstrates robust Skyrmion formation without external magnetic fields.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- B20 phase magnetic materials are crucial for realizing magnetic Skyrmions.
- Stabilizing Skyrmions at room temperature and zero magnetic field is a key challenge in the field.
Purpose of the Study:
- To grow high-quality FeGe epitaxial films on Si(111).
- To demonstrate the formation of Skyrmions in these films at room temperature and zero magnetic field.
Main Methods:
- Epitaxial growth of phase-pure, high crystalline quality FeGe films on Si(111).
- Hall effect measurements to detect Skyrmion formation via the topological Hall effect.
Main Results:
- Formation of high-density Skyrmions in FeGe films between 5 and 275 K.
- Observation of a significant topological Hall effect at zero magnetic field, indicating a robust Skyrmion phase.
Conclusions:
- FeGe epitaxial films on Si(111) support a robust Skyrmion phase.
- Room temperature, zero-field Skyrmion stabilization is achievable in these materials, paving the way for spintronic applications.
