Versatile Transfer of an Ultralong and Seamless Nanowire Array Crystallized at High Temperature for Use in...

Nanowire (NW) transfer technology has provided promising strategies to realize future flexible materials and electronics. Using this technology, geometrically controlled, high-quality NW arrays can now be obtained easily on various flexible substrates with high throughput. However, it is still challenging to extend this technology to a wide range of high-performance device applications because its limited temperature tolerance precludes the use of high-temperature annealing, which is essential for NW crystallization and functionalization. A pulsed laser technique has been developed to anneal NWs in the presence of a flexible substrate; however, the induced temperature is not high enough to improve the properties of materials such as ceramics and semiconductors. Here, we present a versatile nanotransfer method that is applicable to NWs that require high-temperature annealing. To successfully anneal NWs during their transfer, the developed fabrication method involves sequential removal of a nanoscale sacrificial layer. Using this method, we first produce an ultralong, perfectly aligned polycrystalline barium titanate (BaTiO₃) NW array that is heat treated at 700 °C on a flexible polyethylene terephthalate (PET) substrate. This high-quality piezoelectric NW array on a flexible substrate is used as a flexible nanogenerator that generates current and voltage 37 and 10 times higher, respectively, than those of a nanogenerator made of noncrystallized BaTiO₃ NWs.