Materials design parameters for infrared device applications based on III-V semiconductors

Area of Science:

• Materials Science
• Semiconductor Physics
• Infrared Detector Technology

Background:

• Collaborative development of infrared detector materials by the Army Research Laboratory and Stony Brook University.
• Previous work focused on mid-wave strained layer superlattice (SLS) cameras and minority carrier lifetime studies.

Purpose of the Study:

• To explore new fundamental understandings and enhance control in III-V semiconductor crystal growth.
• To develop advanced infrared detector materials with tailored properties for specific wavelength bands.

Main Methods:

• Utilized molecular beam epitaxy for III-V semiconductor crystal growth.
• Developed Ga-free SLS on GaSb substrates and virtual substrate technology.
• Investigated InAsSb material properties and atomic ordering in general Ga-free SLS.

Main Results:

• Demonstrated virtual substrate technology, making lattice constant a design parameter for undistorted bulk InAsSb.
• Achieved broad absorption (8-12 μm) with InAsSb due to a large bandgap bowing parameter.
• Developed a general Ga-free SLS approach for longer wavelengths, overcoming limitations of special Ga-free SLS.

Conclusions:

• The general Ga-free InAsSb SLS offers enhanced optical absorption and hole transport for long-wavelength applications.
• Introduced a novel method to induce and control atomic ordering in general Ga-free InAsSb SLS, adding a new design parameter.