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Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
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SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters.

Nils von den Driesch1, Daniela Stange1, Stephan Wirths1

  • 1Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies (JARA-FIT), Forschungszentrum Juelich, 52425, Juelich, Germany.

Small (Weinheim an Der Bergstrasse, Germany)
|February 5, 2017
PubMed
Summary

Silicon-germanium-tin (SiGeSn) ternaries were grown on silicon wafers for optoelectronic applications. These materials enable tunable bandgaps for short-wave infrared light emission, demonstrating potential for advanced light emitters.

Keywords:
SiGeSngroup IVheterostructureslight emitting diodessilicon photonics

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Silicon-germanium-tin (SiGeSn) alloys are promising for optoelectronic devices.
  • Achieving high crystalline quality and tunable bandgaps in SiGeSn is crucial for infrared applications.

Purpose of the Study:

  • To grow high-quality SiGeSn ternaries on Ge-buffered Si wafers.
  • To engineer the bandgap of SiGeSn for short-wave infrared (SWIR) applications.
  • To investigate the potential of SiGeSn for light-emitting diodes (LEDs) and strain-relaxed buffers.

Main Methods:

  • Epitaxial growth of SiGeSn ternaries with varying Si and Sn content (up to 15 at%).
  • Absorption measurements for bandgap characterization.
  • Temperature-dependent photoluminescence experiments to assess light emission properties.
  • Monitoring layer relaxation for buffer applications.

Main Results:

  • SiGeSn ternaries grown with high crystalline quality and layer thicknesses up to 600 nm.
  • Bandgap engineering achieved in the SWIR range up to 2.6 µm through stoichiometry and strain tuning.
  • Materials near the indirect-to-direct bandgap transition were identified.
  • Strong room temperature light emission observed from a fabricated GeSn/SiGeSn multiquantum well heterostructure LED.

Conclusions:

  • SiGeSn ternaries offer tunable bandgaps for SWIR optoelectronics.
  • The developed heterostructure approach shows significant potential for efficient light emitters.
  • SiGeSn materials are suitable for both LEDs and strain-relaxed buffer applications.