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Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

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Graphene-like Boron-Carbon-Nitrogen Monolayers.

Sumit Beniwal¹, James Hooper², Daniel P Miller³

¹Department of Physics & Astronomy, University of Nebraska , Lincoln, Nebraska 68588-0299, United States.

|February 7, 2017

Summary

Researchers synthesized a novel 2D ternary material, hexagonal boron carbon nitride (h-BCN), using a precursor molecule. This engineered material exhibits unique electronic properties, bridging the gap between graphene and hexagonal boron nitride.

Keywords:

2D 2D material BCN STM bis-BN cyclohexane boron nitride graphene

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Area of Science:

Materials Science
2D Materials
Nanotechnology

Background:

Graphene and hexagonal boron nitride (h-BN) are key 2D materials with distinct electronic properties.
Ternary 2D materials offer tunable electronic and physical characteristics.
Synthesizing novel ternary 2D materials is crucial for advanced electronic applications.

Purpose of the Study:

To present a novel synthesis strategy for a 2D ternary monolayer material composed of carbon, nitrogen, and boron (h-BCN).
To investigate the structural, morphological, and electronic properties of the synthesized h-BCN monolayer.
To explore the potential of h-BCN as a tunable electronic material.

Main Methods:

Synthesis of h-BCN via thermally induced dehydrogenation of bis-BN cyclohexane on an Ir(111) substrate.
Characterization using molecular-resolved scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and low-energy electron diffraction (LEED).
Theoretical analysis using density functional theory (DFT) calculations.

Main Results:

Successful synthesis of an epitaxial 2D h-BCN monolayer with a corrugated morphology due to lattice mismatch and strain.
Comprehensive structural and morphological data obtained from STM, XPS, LEED, and DFT.
DFT calculations predict a direct electronic band gap for h-BCN, intermediate between graphene and h-BN.

Conclusions:

A viable synthesis route for 2D h-BCN has been established.
The synthesized h-BCN exhibits unique strain-driven buckling and tunable electronic properties.
This work opens avenues for exploring ternary 2D materials with tailored electronic band gaps.