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Updated: Mar 7, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

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Weak localization and the approach to metal-insulator transition in single crystalline germanium nanowires

Shaili Sett1, K Das1, A K Raychaudhuri1

  • 1Unit for Nanoscience, Department of Condensed Matter Physics and Material Science, S N Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 098, India.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|February 8, 2017
PubMed

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