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Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

Songang Peng1,2, Zhi Jin1, Dayong Zhang1,2

  • 1High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029, China.

ACS Applied Materials & Interfaces
|February 9, 2017
PubMed

Keywords:
1/f noisecarrier fluctuationcharge trapgraphenetransistor

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