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An Accurate Value for the Absorption Coefficient of Silicon at 633 nm
Jon Geist1, A Russell Schaefer2, Jun-Feng Song1
1National Institute of Standards and Technology, Gaithersburg, MD 20899.
Abstract:
High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-µm thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105±62 cm-1 and 0.01564±0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature.
