Red Light-Emitting Diode Based on Blue InGaN Chip with CdTe x S(1 - x) Quantum Dots
Rongfang Wang1,2, Xingming Wei3,4, Liqin Qin3,4
1Guangxi Key Laboratory of Agricultural Products Processing (Cultivating Base), Colleges and Universities Key Laboratory for Efficient Use of Agricultural Resources in the Southeast of Guangxi, College of Chemistry and Food Science, Yulin Normal University, Yulin, Guangxi, 537000, People's Republic of China. fangfang393@163.com.
Abstract:
Thioglycolic acid-capped CdTe x S(1 - x) quantum dots (QDs) were synthesized through a one-step approach in an aqueous medium. The CdTe x S(1 - x) QDs played the role of a color conversion center. The structural and luminescent properties of the obtained CdTe x S(1 - x) QDs were investigated. The fabricated red light-emitting hybrid device with the CdTe x S(1 - x) QDs as the phosphor and a blue InGaN chip as the excitation source showed a good luminance. The Commission Internationale de L'Eclairage coordinates of the light-emitting diode (LED) at (0.66, 0.29) demonstrated a red LED. Results showed that CdTe x S(1 - x) QDs can be excited by blue or near-UV regions. This feature presents CdTe x S(1 - x) QDs with an advantage over wavelength converters for LEDs.
