Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part II. Interpreting Oxide-Bias Experiments

Area of Science:

• Semiconductor device physics
• Photovoltaic device characterization
• Optical sensor modeling

Background:

• PC-1D is a semiconductor device modeling program.
• Accurate photodiode modeling is crucial for various applications.
• Previous work (Part I) detailed PC-1D and supporting programs.

Purpose of the Study:

• Simulate oxide-bias self-calibration experiments on silicon photodiodes.
• Determine photodiode characteristics using advanced simulations.
• Compare simulation accuracy with conventional data reduction methods.

Main Methods:

• Utilized the PC-1D semiconductor device modeling program.
• Simulated oxide-bias self-calibration experiments.
• Applied simulations to three distinct silicon photodiode types.

Main Results:

• Simulations successfully determined photodiode characteristics.
• Internal quantum efficiency was accurately calculated for different photodiode types.
• Achieved more precise internal quantum efficiency values and uncertainty estimates compared to conventional methods.
• Identified a nominal internal quantum efficiency of 0.9997 ± 0.0003 for one photodiode type (440-460 nm).

Conclusions:

• PC-1D simulations provide a robust method for photodiode characterization.
• The simulation approach enhances accuracy in determining internal quantum efficiency.
• This technique offers a reliable way to estimate uncertainty in photodiode parameters.