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Lowest ^{2}S Electronic Excitations of the Boron Atom
Sergiy Bubin1, Ludwik Adamowicz2,3
1Department of Physics, School of Science and Technology, Nazarbayev University, Astana 010000, Kazakhstan.
Physical Review Letters
|February 11, 2017
Summary
A new theoretical method accurately calculates atomic properties using non-Born-Oppenheimer calculations. This approach achieves high precision for electronic excitations in atoms like boron.
Area of Science:
- Quantum Chemistry
- Atomic Physics
- Theoretical Chemistry
Background:
- Accurate calculation of atomic bound states is crucial for understanding atomic structure and spectra.
- Existing methods often rely on approximations that limit accuracy, especially for systems with few electrons.
Purpose of the Study:
- To develop and implement a novel ab initio theoretical approach for calculating bound states of small atoms.
- To achieve high accuracy in determining electronic excitation energies for the boron atom.
Main Methods:
- Finite-nuclear-mass, non-Born-Oppenheimer (non-BO) nonrelativistic variational calculations.
- Utilizing all-particle explicitly correlated Gaussian functions.
- Incorporating leading relativistic and quantum electrodynamics (QED) energy corrections.
Main Results:
- The developed approach was applied to calculate total and transition energies for the lowest four ^{2}S electronic excitations of the boron atom.
- Calculated transition energies show excellent agreement with experimental values, within 0.2–0.3 cm⁻¹.
- This level of accuracy, previously limited to three- and four-electron systems, is now extended.
Conclusions:
- The new theoretical approach provides a highly accurate method for calculating atomic bound states and excitation energies.
- The demonstrated accuracy for the boron atom validates the non-Born-Oppenheimer approach with explicitly correlated Gaussian functions and QED corrections.
- This method opens possibilities for precise calculations on a wider range of atomic and molecular systems.
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