Related Experiment Video
Updated: Mar 7, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge
Cher Ming Tan1, Xiangchen Chen1
1School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang, 639798 Singapore.
Abstract:
The failure and degradation mechanisms of gate-all-around silicon nanowire FET subjected to electrostatic discharge (ESD) are investigated through device modeling. Transmission line pulse stress test is simulated and device degradation physics is modeled. The device degradation level, interface state concentration and hard breakdown are shown and analyzed. From the model, we found that ESD stress can induce severe performance degradation or even hard breakdown of gate-all-around nanowire device, and the interface traps due to hot carrier injection is responsible for the device degradation.
More Related Videos
11:25Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
09:14Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Related Concept Videos
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...