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Related Experiment Video

Updated: Mar 7, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Current Rectification through Vertical Heterojunctions between Two Single-Layer Dichalcogenides (WSe₂|MoS₂

Hrishikesh Bhunia¹, Abhijit Bera¹, Amlan J Pal¹

¹Department of Solid State Physics, Indian Association for the Cultivation of Science , Jadavpur, Kolkata 700032, India.

ACS Applied Materials & Interfaces

|February 14, 2017

Summary

Researchers created vertical heterojunctions using single layers of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2). These junctions exhibit current rectification, a key property for electronic devices, demonstrating the potential of 2D materials.

Keywords:

2D single layer current rectification density of states formation of pn-junction between two single layers p-type WSe2 and n-type MoS2 scanning tunneling spectroscopy

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Area of Science:

Materials Science
Condensed Matter Physics
Nanoscience

Background:

Two-dimensional (2D) materials like tungsten diselenide (WSe2) and molybdenum disulfide (MoS2) offer unique electronic properties.
Vertical heterojunctions are promising for novel electronic device architectures.
Understanding band alignment is crucial for predicting and controlling charge transport in heterojunctions.

Purpose of the Study:

To fabricate and characterize vertical heterojunctions between single layers of p-type WSe2 and n-type MoS2.
To investigate the current rectification behavior in WSe2|MoS2 and MoS2|WSe2 junctions.
To determine the band alignment and its role in the observed rectification.

Main Methods:

Fabrication of van der Waals heterojunctions using single-layer WSe2 and MoS2.
Vertical current-voltage (I-V) characterization using a scanning tunneling microscope (STM) tip.
Scanning tunneling spectroscopy (STS) to probe the density of states (DOS) and determine band edges (conduction band - CB, valence band - VB).

Main Results:

Both WSe2|MoS2 and MoS2|WSe2 junctions exhibited significant current rectification.
The direction of rectification was opposite for pn- (WSe2|MoS2) and np- (MoS2|WSe2) junctions, confirming junction-intrinsic behavior.
STS measurements revealed a type-II band alignment between WSe2 and MoS2, consistent with the observed rectification.

Conclusions:

Single-layer WSe2 and MoS2 form functional vertical heterojunctions exhibiting current rectification.
The observed rectification is attributed to the type-II band alignment at the WSe2/MoS2 interface.
These findings provide experimental evidence for current rectification in van der Waals vertical heterojunctions, paving the way for 2D material-based electronic devices.