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Updated: Mar 7, 2026
11:14
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
14.5K
Beam broadening in transmission and conventional EBSD.
Katherine P Rice1, Yimeng Chen1, Robert R Keller2
1Cameca Instruments, 5500 Nobel Dr., Madison, WI 53711, United States.
Micron (Oxford, England : 1993)
|February 14, 2017
Summary
This study compares transmission electron backscatter diffraction (t-EBSD) and conventional reflection EBSD resolution. Optimizing sample thickness and electron beam energy is crucial for high-resolution crystal orientation mapping.
Area of Science:
- Materials Science
- Crystallography
- Electron Microscopy
Background:
- Transmission electron backscatter diffraction (t-EBSD) is a routine technique for high-resolution crystal orientation mapping, particularly for nanoscale and micron-sized samples.
- Conventional reflection EBSD is widely used, but its resolution can be limited by sample volume and electron scattering effects.
Purpose of the Study:
- To compare the spatial resolution of t-EBSD and conventional reflection EBSD techniques.
- To investigate the impact of sample volume and characterization conditions on EBSD resolution.
- To provide insights into electron scattering and probe volume for practical EBSD implementation.
Main Methods:
- Utilized experimental measurements and Monte Carlo simulations of electron trajectories.
- Analyzed electron beam size, effective resolution, and electron flux as a function of sample thickness and incident beam energy.
- Evaluated the trade-offs between spatial resolution and diffracted electron yield.
Main Results:
- Increasing incident beam energy can negatively affect beam diameter in t-EBSD.
- Thinning samples for conventional EBSD improves resolution but reduces backscattered electron yield.
- Maintaining a high yield of diffracted electrons is critical for effective EBSD characterization.
Conclusions:
- Both spatial resolution and electron yield are critical factors for implementing t-EBSD and reflection EBSD.
- Understanding electron scattering and probe volume is essential for optimizing EBSD techniques.
- This work offers key insights for practical application of EBSD in materials characterization.
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