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Refractory period of an excitable semiconductor laser with optical injection
B Garbin1,2, A Dolcemascolo1,3, F Prati3,4
1Université Côte d'Azur-CNRS, Institut Non Linéaire de Nice, France.
Physical Review. E
|February 18, 2017
Abstract:
Injection-locked semiconductor lasers can be brought to a neuronlike excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.

