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Far-UV Annealed Inkjet-Printed In2O3 Semiconductor Layers for Thin-Film Transistors on a Flexible Polyethylene
Jaakko Leppäniemi1, Kim Eiroma1, Himadri Majumdar1
1VTT Technical Research Centre of Finland, Ltd. , Tietotie 3, FI-02044 Espoo, Finland.
ACS Applied Materials & Interfaces
|February 18, 2017
Summary
Optimized inkjet printing of indium oxide (In2O3) semiconductor films at low temperatures. This process enables the fabrication of high-performance, printed thin-film transistors on flexible substrates for commercial applications.
Area of Science:
- Materials Science
- Electronics Engineering
- Nanotechnology
Background:
- Inkjet printing offers a low-cost, scalable method for fabricating electronic devices.
- Developing efficient low-temperature processes for metal oxide semiconductor fabrication on flexible substrates is crucial for next-generation electronics.
Purpose of the Study:
- To optimize an inkjet-printing process for indium oxide (In2O3) precursor solutions.
- To develop a low-temperature conversion method for In2O3 films suitable for flexible substrates.
- To fabricate and characterize enhancement-mode thin-film transistors (TFTs) using the developed process.
Main Methods:
- Optimized precursor solution formulation using ethylene glycol as a cosolvent for stable droplet formation.
- Low-temperature (150-200 °C) conversion of inkjet-printed In2O3 precursor films using combined far-ultraviolet (FUV) exposure and thermal treatment.
- Material characterization using grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), and Fourier transform infrared (FTIR) spectroscopy.
- Fabrication and electrical performance evaluation of TFTs on rigid and flexible substrates.
Main Results:
- Achieved a robust and repeatable inkjet-printing process for In2O3 precursor solutions.
- Obtained amorphous, high-density (up to 5.87 g/cm3), and low-impurity In2O3 films via combined FUV and thermal annealing.
- Demonstrated enhancement-mode TFTs with saturation mobilities of 4.3 cm2/(Vs) on rigid Si/SiO2 and ~1 cm2/(Vs) on flexible PEN substrates after 180 min annealing at 150 °C.
Conclusions:
- The developed low-temperature inkjet-printing and annealing process enables the fabrication of high-performance In2O3 semiconductor films on flexible substrates.
- This approach paves the way for manufacturing printed metal-oxide TFT arrays on cost-effective, flexible materials for commercial applications.
- The optimized process offers a promising route for scalable production of flexible electronics.

