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Gate-tunable electron interaction in high-κ dielectric films

Svitlana Kondovych1, Igor Luk'yanchuk1,2, Tatyana I Baturina3,4,5

  • 1University of Picardie, Laboratory of Condensed Matter Physics, Amiens, 80000, France.

Scientific Reports
|February 21, 2017
PubMed
Summary

The confinement range of electrostatic interactions in high-dielectric constant (high-κ) thin films can be tuned using gate electrodes. This tuning alters the nature of interactions, impacting topological phase transitions and nanodevice performance.

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