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Related Concept Videos

Elastic Strain Energy for Shearing Stresses01:20

Elastic Strain Energy for Shearing Stresses

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As discussed in previous lessons, strain energy in a material is the energy stored when it is elastically deformed, a concept crucial in materials science and mechanical engineering. This energy results from the internal work done against the cohesive forces within the material. When a material undergoes shearing stress and corresponding shearing strain, the strain energy density, which is the energy stored per unit volume, is calculated. Within the elastic limit, where the stress is...
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Shearing Strain01:20

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The shearing strain represents a cubic element's angular change when subjected to shearing stress. This type of stress can transform a cube into an oblique parallelepiped without influencing normal strains. The cubic element experiences a significant transformation when exposed solely to shearing stress. Its shape alters from a perfect cube into a rhomboid, clearly demonstrating the effect of shearing strain. The degree of this strain is considered positive if it reduces the angle between the...
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Strain and Elastic Modulus01:15

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The quantity that describes the deformation of a body under stress is known as strain. Strain is given as a fractional change in either length, volume, or geometry under tensile, volume (also known as bulk), or shear stress, respectively, and is a dimensionless quantity. The strain experienced by a body under tensile or compressive stress is called tensile or compressive strain, respectively. In contrast, the strain experienced under bulk stress and shear stress is known as volume and shear...
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Non-ohmic Devices00:51

Non-ohmic Devices

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In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires.

S Conesa-Boj1,2, A Li1,2, S Koelling2

  • 1Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ Delft, The Netherlands.

Nano Letters
|February 24, 2017
PubMed
Summary
This summary is machine-generated.

Germanium-Silicon core-shell nanowires show enhanced hole mobility due to controlled strain. This breakthrough advances potential applications in next-generation electronic and quantum transport devices.

Keywords:
Nanowiredefect-freeepitaxygermaniummobilitysilicon

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Core-shell nanowires offer solutions to limitations in traditional heterostructures.
  • Understanding strain relaxation is crucial for defect reduction and improved electronic properties.

Purpose of the Study:

  • To investigate the mechanism of strain relaxation in [110]-oriented Germanium-Silicon (Ge-Si) core-shell nanowires.
  • To enhance hole mobility by optimizing band offset and coherent strain.

Main Methods:

  • Fabrication and characterization of individual Ge-Si core-shell nanowires.
  • Electrical transport measurements to determine carrier mobility.
  • Analysis of the correlation between mobility, crystal orientation, diameter, and strain.

Main Results:

  • Achieved significantly enhanced hole mobility in [110]-oriented Ge-Si core-shell nanowires.
  • Mobility values reached 4200 cm²/Vs at 4 K and 1600 cm²/Vs at room temperature.
  • Demonstrated a direct correlation between mobility and factors like crystal direction, diameter, and coherent strain.

Conclusions:

  • [110]-oriented Ge-Si core-shell nanowires exhibit substantial hole mobility enhancement.
  • These nanowires are promising for advanced electronic and quantum transport devices.
  • Controlling strain and band offset is key to unlocking their potential.