Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.4K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.4K
Conservative Site-specific Recombination and Phase Variation02:53

Conservative Site-specific Recombination and Phase Variation

7.1K
Because the DNA segments are cut and reorganized in a direction-specific manner, site-specific recombination has emerged as an efficient genetic engineering technique. Flippase and Cyclization recombinases or Flp and Cre, respectively, are two members of the tyrosine recombinase family derived from bacteriophages, that are used to mediate site-specific DNA insertions, deletions, and targeted expression of proteins in mammalian cell lines.
The recognition sites for Cre recombinase called LoxP...
7.1K
Gene Conversion02:08

Gene Conversion

10.8K
Other than maintaining genome stability via DNA repair, homologous recombination plays an important role in diversifying the genome. In fact, the recombination of sequences forms the molecular basis of genomic evolution. Random and non-random permutations of genomic sequences create a library of new amalgamated sequences. These newly formed genomes can determine the fitness and survival of cells. In bacteria, homologous and non-homologous types of recombination lead to the evolution of new...
10.8K
Overview of Transposition and Recombination02:13

Overview of Transposition and Recombination

19.9K
Transposons make up a significant part of genomes of various organisms. Therefore, it is believed that transposition played a major evolutionary role in speciation by changing genome sizes and modifying gene expression patterns. For example, in bacteria, transposition can lead to conferring antibiotic resistance. Movement of transposable elements within the genetic pool of pathogenic bacteria can aid in transfer of antibiotic-resistant genetic elements. In eukaryotes, transposons can carry out...
19.9K
Exon Recombination02:32

Exon Recombination

4.2K
The evolution of new genes is critical for speciation. Exon recombination, also known as exon shuffling or domain shuffling, is an important means of new gene formation. It is observed across vertebrates, invertebrates, and in some plants such as potatoes and sunflowers. During exon recombination, exons from the same or different genes recombine and produce new exon-intron combinations, which might evolve into new genes. 
Exon shuffling follows “splice frame rules.” Each exon...
4.2K
Viral Recombination00:57

Viral Recombination

25.4K
Cells are sometimes infected by more than one virus at once. When two viruses disassemble to expose their genomes for replication in the same cell, similar regions of their genomes can pair together and exchange sequences in a process called recombination. Alternatively, viruses with segmented genomes can swap segments in a process called reassortment.
25.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

The characteristics and polarization effects in AlInGaN barrier GaN MISHEMT with various compositions of group III elements.

Scientific reports·2025
Same author

Current Confinement Effect on the Performance of Blue Light Micro-LEDs with 10 μm Dimension.

ACS omega·2023
Same author

Non-linear Relationship between Tacrolimus Blood Concentration and Acute Rejection After Kidney Transplantation: A Systematic Review and Dose-Response Meta-Analysis of Cohort Studies.

Current pharmaceutical design·2019
Same author

Curcumin suppresses intestinal microvascular endothelial cells invasion and angiogenesis induced by activated platelets.

Experimental and therapeutic medicine·2019
Same author

Different removal efficiency of disinfection-byproduct precursors between dichloroacetonitrile (DCAN) and dichloroacetamide (DCAcAm) by up-flow biological activated carbon (UBAC) process.

Environmental science and pollution research international·2019
Same author

Degradation kinetics, byproducts formation and estimated toxicity of metronidazole (MNZ) during chlor(am)ination.

Chemosphere·2019

Related Experiment Video

Updated: Mar 7, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells.

Tao Lin1, Hao Chung Kuo2, Xiao Dong Jiang1

  • 1Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning, 530004, China.

Nanoscale Research Letters
|February 26, 2017
PubMed
Summary

Transient photoluminescence (PL) of green InGaN/GaN quantum well LEDs reveals two exciton recombination pathways. Indium fluctuations cause slow decay, while layer thickness variations cause fast decay, impacting green emission mechanisms.

Keywords:
Exciton localizationLight-emitting diodesPhotoluminescence

More Related Videos

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

9.6K

Related Experiment Videos

Last Updated: Mar 7, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

9.6K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Optoelectronics

Background:

  • Indium Gallium Nitride (InGaN) / Gallium Nitride (GaN) multiple quantum wells (MQWs) are crucial for green light-emitting diodes (LEDs).
  • Understanding the microscopic mechanisms behind their emission properties is essential for device optimization.

Purpose of the Study:

  • To investigate the transient photoluminescence (PL) properties of green-emitting InGaN/GaN MQW LEDs.
  • To elucidate the dominant microscopic mechanisms responsible for green emission and its dynamics.

Main Methods:

  • Transient photoluminescence (PL) spectroscopy was employed to analyze the emission dynamics.
  • The study focused on correlating PL decay pathways with material properties.

Main Results:

  • Localized exciton recombination was identified as the primary mechanism for green emission.
  • Two distinct decay pathways (fast and slow) were observed, attributed to indium compositional fluctuations and InGaN layer thickness variations, respectively.
  • The contribution of these pathways varied with emission photon energy, with fast decay decreasing at lower energies.

Conclusions:

  • The findings provide a clear microscopic understanding of the excitation-emission process in green InGaN/GaN MQW LEDs.
  • The study highlights the role of material imperfections in influencing the optoelectronic properties of these devices.