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Atomic Emission Spectroscopy: Overview01:20

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Atomic emission spectroscopy (AES) is an analytical technique used to determine the elemental composition of a sample by analyzing the light emitted from excited atoms. In AES, atoms in a sample are excited to higher energy levels by thermal energy from high-temperature sources, such as plasma, arcs, or sparks. When these excited atoms return to lower energy states, they emit light at specific wavelengths characteristic of each element. The resulting atomic emission spectrum, which consists of...
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Atomic fluorescence spectroscopy (AFS) is an analytical technique that involves the electronic transitions of atoms in a flame, furnace, or plasma being excited by electromagnetic (EM) radiation. When these atoms absorb energy, they become excited and subsequently release energy as they return to their original state. This emitted light, or "fluorescence," is observed at a right angle to the incident beam. Both absorption and emission processes transpire at distinct wavelengths, which...
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Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation01:26

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Inductively coupled plasma (ICP) is the common plasma source used in atomic emission spectroscopy (AES), a technique that detects and analyzes various elements in a sample. This method is often called inductively coupled plasma atomic emission spectroscopy (ICP-AES).
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A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
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Surface EXAFS via differential electron yield.

Noritake Isomura1, Takaaki Murai2, Toyokazu Nomoto2

  • 1Toyota Central R&D Labs Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan.

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|March 1, 2017
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Summary

Extended X-ray absorption fine-structure (EXAFS) spectroscopy using the differential electron yield (DEY) method enables surface analysis. This technique accurately determines the Si-O bond distance in thin SiO2 layers, demonstrating its utility for surface-sensitive measurements.

Keywords:
EXAFSXASpartial electron yieldsilicon dioxidesurface-sensitive

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Area of Science:

  • Materials Science
  • Surface Science
  • Spectroscopy

Background:

  • Extended X-ray absorption fine-structure (EXAFS) spectroscopy is a powerful tool for atomic-level structural analysis.
  • Surface analysis requires techniques with high surface sensitivity to probe thin films and interfaces.
  • Traditional EXAFS methods can be limited by bulk contributions, necessitating surface-specific approaches.

Purpose of the Study:

  • To demonstrate surface-sensitive analysis using EXAFS with the differential electron yield (DEY) method.
  • To analyze a thin silicon dioxide (SiO2) layer on a silicon (Si) substrate.
  • To determine the structural parameters, specifically the Si-O bond distance, of the surface layer.

Main Methods:

  • Utilized extended X-ray absorption fine-structure (EXAFS) spectroscopy.
  • Employed the differential electron yield (DEY) detection method, which measures Auger electrons.
  • Analyzed a 12.4 nm SiO2/Si sample, focusing on the Si K-edge.
  • Applied Fourier transformation to spectral oscillations for structural analysis.

Main Results:

  • The DEY method effectively removed intensity variations in EXAFS spectra, enabling analysis.
  • The Si K-edge DEY X-ray absorption near-edge structure (XANES) indicated a surface analysis depth of approximately 4.2 nm.
  • The first nearest neighbor (Si-O) distance was determined to be 1.63 Å via Fourier transform of DEY-EXAFS oscillations.
  • This distance is consistent with values reported for bulk SiO2.

Conclusions:

  • The differential electron yield (DEY) method enables effective surface-sensitive EXAFS analysis.
  • This technique can probe thin surface layers, such as a 12.4 nm SiO2 film, with a shallow analysis depth.
  • The determined Si-O bond distance confirms the structural integrity of the surface layer and the applicability of DEY-EXAFS for surface characterization.