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Infrared Plasmonics with Conductive Ternary Nitrides
C Metaxa1, S Kassavetis1, J F Pierson2
1Department of Physics, Aristotle University of Thessaloniki , GR-54124 Thessaloniki, Greece.
ACS Applied Materials & Interfaces
|March 8, 2017
Summary
Ternary transition metal nitrides offer tunable infrared plasmonic activity. TiₓSc₁₋ₓN and TiₓMg₁₋ₓN show promise, but high crystallinity is needed for optimal performance.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Conductive transition metal nitrides are refractory and CMOS-compatible plasmonic materials.
- Ternary nitrides offer tunable plasmonic activity, unlike Ta-based nitrides.
Purpose of the Study:
- Investigate tunable plasmonic activity of B1 structure ternary transition metal nitrides.
- Identify promising nitride materials for infrared applications.
Main Methods:
- Calculated surface plasmon polariton dispersion and field enhancement.
- Considered intrinsic quality factors of surface plasmon polariton.
Main Results:
- Ternary nitrides with group-IVb and group II/III elements show tunable infrared plasmonic activity.
- TiₓSc₁₋ₓN and TiₓMg₁₋ₓN are promising, with TiₓSc₁₋ₓN active in telecom bands.
- Electronic losses due to fine grains limit plasmonic field enhancement.
Conclusions:
- Ternary nitrides are viable for tunable infrared plasmonics.
- Improved fabrication processes are required for high-crystallinity nitrides and enhanced performance.
