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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Analysis of the interface characteristics of CVD-grown monolayer MoS2 by noise measurements
Tae-Young Kim1, Younggul Song1, Kyungjune Cho1
1Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea.
Abstract:
We investigated the current-voltage and noise characteristics of two-dimensional (2D) monolayer molybdenum disulfide (MoS2) synthesized by chemical vapor deposition (CVD). A large number of trap states were produced during the CVD process of synthesizing MoS2, resulting in a disordered monolayer MoS2 system. The interface trap density between CVD-grown MoS2 and silicon dioxide was extracted from the McWhorter surface noise model. Notably, generation-recombination noise which is attributed to charge trap states was observed at the low carrier density regime. The relation between the temperature and resistance following the power law of a 2D inverted-random void model supports the idea that disordered CVD-grown monolayer MoS2 can be analyzed using a percolation theory. This study can offer a viewpoint to interpret synthesized low-dimensional materials as highly disordered systems.
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