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Reading and writing single-atom magnets.

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This summary is machine-generated.

Researchers achieved atomic-scale magnetic storage by reading and writing individual holmium atoms on magnesium oxide. These single-atom bits retain magnetic information for hours, paving the way for ultra-high-density data storage.

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Area of Science:

  • Materials Science
  • Quantum Physics
  • Nanotechnology

Background:

  • The quest for higher data storage density pushes towards the ultimate limit of single-atom magnetic bits.
  • Previous studies demonstrated long magnetic relaxation times in single lanthanide atoms, but individual addressing remained a challenge.

Purpose of the Study:

  • To demonstrate the electrical reading and writing of magnetism in individual holmium atoms on magnesium oxide (MgO).
  • To confirm the stability and independent operation of single-atom magnetic bits for data storage applications.

Main Methods:

  • Utilized scanning tunneling microscopy for electrical writing of magnetic states using current pulses.
  • Employed tunnel magnetoresistance for reading the magnetic states of individual holmium atoms.
  • Confirmed magnetic properties and stability using single-atom electron spin resonance on a nearby iron sensor atom.

Main Results:

  • Successfully read and wrote magnetic states of individual holmium atoms on MgO, with information retained for many hours.
  • Confirmed a large out-of-plane magnetic moment for holmium atoms on MgO (10.1 ± 0.1 Bohr magnetons).
  • Demonstrated independent operation of two holmium bits in an atomic-scale structure, writing and reading all four possible states.

Conclusions:

  • Single-atom magnetic memory is feasible, with individual holmium atoms on MgO serving as stable, addressable bits.
  • The combination of electrical read/write capabilities and high magnetic stability opens new avenues for ultra-high-density data storage.