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Multicolor emission from intermediate band semiconductor ZnO1-xSex
M Welna1, M Baranowski1,2, W M Linhart1
1Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
Scientific Reports
|March 14, 2017
Summary
This study reveals that Zinc Oxide Selenide (ZnOSe) alloys exhibit valence band splitting due to band anticrossing, leading to multiband emission. These properties suggest potential for solar power conversion applications.
Area of Science:
- Materials Science
- Solid State Physics
- Semiconductor Physics
Background:
- Zinc Oxide Selenide (ZnOSe) alloys are investigated for their unique electronic properties.
- Understanding band structure modifications in semiconductor alloys is crucial for device applications.
Purpose of the Study:
- To investigate the valence band splitting in ZnOSe alloys.
- To analyze the impact of band anticrossing on optical properties.
- To explore the potential of ZnOSe for solar energy applications.
Main Methods:
- Photoluminescence and photomodulated reflectivity measurements were employed.
- The kp method combined with the band anticrossing model was used for electronic band structure calculations.
Main Results:
- Valence band splitting was demonstrated due to band anticrossing between localized Se states and ZnO valence band states.
- Strong multiband emission was observed at room temperature, linked to transitions to lower E- and upper E+ valence subbands.
- Composition-dependent optical transition energies were accurately explained by theoretical models.
Conclusions:
- The observed multiband emission is facilitated by long recombination lifetimes (>1 ns).
- ZnOSe alloys show promise as intermediate band semiconductors for efficient solar power conversion.
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