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High-power thulium lasers on a silicon photonics platform.

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    Researchers developed high-power, efficient thulium-doped silicon photonic lasers for mid-infrared applications. These compact, monolithic sources operate in the 2 μm region, expanding silicon photonics capabilities.

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    Area of Science:

    • Photonics and optical engineering
    • Materials science
    • Integrated optics

    Background:

    • Mid-infrared (MIR) lasers are crucial for applications like spectroscopy, sensing, and communication.
    • Silicon photonics offers a low-cost, compact platform for integrated optical devices.
    • High-power, efficient monolithic light sources in the 2 μm range remain underdeveloped.

    Purpose of the Study:

    • To develop high-power, high-efficiency, monolithic silicon-based laser sources operating in the 2 μm wavelength region.
    • To demonstrate the feasibility of CMOS-compatible thulium-doped lasers on a silicon photonic platform.
    • To extend the capabilities of silicon photonics for MIR applications.

    Main Methods:

    • Fabrication of thulium-doped distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers.
    • Integration of these lasers onto a silicon photonic platform.
    • Characterization of laser performance, including output power, slope efficiency, and side-mode suppression ratio (SMSR).

    Main Results:

    • Achieved single-mode output powers of up to 267 mW (DFB) and 387 mW (DBR).
    • Demonstrated high slope efficiencies of 14% (DFB) and 23% (DBR).
    • Obtained side-mode suppression ratios exceeding 70 dB for both laser types.

    Conclusions:

    • Successfully developed high-performance, CMOS-compatible thulium-doped silicon photonic lasers in the 2 μm region.
    • These results represent a significant advancement for monolithic MIR light sources on silicon.
    • The work broadens the application scope of silicon photonic microsystems in the mid-infrared spectrum.