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Updated: Mar 6, 2026

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Polydomain structures in ferroelectric and ferroelastic epitaxial films
Alexander L Roytburd1, Jun Ouyang, Andrei Artemev
1Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, United States of America. Materials Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.
Abstract:
A review of theoretical models, phase field modeling and experimental studies of domain structures in epitaxial films is presented. The thermodynamic theory of such domain structures is presented within the macroscopic thermo-mechanical framework. The theory allows for the evaluation of the main parameters of the domain structure using the energy minimization approach applied to the energy of elastic interactions. For homophase (polytwin) films, the thermodynamic theory provides a quantitative tool that can be used to estimate domain fractions in the film and the type of domain structure architecture. For heterophase films, the theory describes (a) the conditions under which two-phase structures can be obtained in epitaxial films, and (b) the phase and domain fractions in these films. The thermodynamic theory can also be used to describe the extrinsic contributions from domain structures to the functional properties of epitaxial ferroelectric films. The review of phase field modeling demonstrates that computational results reproduce the predictions of the thermodynamic theory. It is also shown that the phase field modeling that utilizes the energy minimization procedure for elastic and interfacial energies can be used to predict domain morphology for the films with two-phase structures produced either by phase transformation or through the co-deposition of immiscible phases. The experimental data presented in the review validate predictions of the thermodynamic model and the results of phase field modeling.
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