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Electrostatic Boundary Conditions in Dielectrics01:27

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Functional electronic inversion layers at ferroelectric domain walls.

J A Mundy1, J Schaab2, Y Kumagai2

  • 1School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA.

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|March 21, 2017
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Summary
This summary is machine-generated.

Researchers controlled electronic transport at ferroelectric domain walls using electric fields. This switching behavior in semiconducting ErMnO3 paves the way for novel electronic nano-devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Ferroelectric domain walls, particularly charged ones, exhibit unique electronic properties due to local electrostatic potentials.
  • These properties offer potential for creating novel two-dimensional functional materials and conductive pathways.
  • Controlling domain wall behavior is crucial for developing all-domain-wall electronic devices.

Purpose of the Study:

  • To demonstrate electric-field control of electronic transport at ferroelectric domain walls.
  • To investigate the mechanism behind the switching behavior in semiconducting materials.
  • To explore the potential for creating tunable electronic nano-components.

Main Methods:

  • Utilized electric fields to manipulate electronic transport at charged domain walls in semiconducting ErMnO3.
  • Observed reversible switching between resistive and conductive states.
  • Analyzed the formation and activation of an inversion layer responsible for charge transport.

Main Results:

  • Demonstrated reversible switching of electronic transport from resistive to conductive states at charged ferroelectric domain walls.
  • Identified the formation and activation of an inversion layer as the mechanism for charge transport.
  • Showcased electric-field tunability of domain wall conductivity.

Conclusions:

  • Electric-field control of ferroelectric domain walls is achievable, enabling tunable electronic properties.
  • The formation of an inversion layer is key to understanding charge transport at these walls.
  • These findings open avenues for designing elementary digital devices based on domain wall circuitry.