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Updated: Mar 5, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Incorporation of dielectric constituents to construct ternary heterojunction structures for high-efficiency
Bin Quan1, Guoyue Xu1, Daoran Li1
1College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 211100, PR China.
Abstract:
To satisfy the diverse requirements of low reflection and high absorption of microwave attenuation, the construction of multiple heterojunction structure is imperative. On the one hand, the impedance mismatching could be ameliorated via the addition of new component; on the other hand, the multiple interface polarizations derived from the architecture of heterojunction make for the dissipation of microwave. In this work, the ternary TiO2/RGO/Fe2O3 composites exhibit tremendous superiority compared with single TiO2 or RGO no matter the absorption coefficient or effective bandwidth. The maximum absorption value of the TiO2/RGO/Fe2O3 composites is -44.05dB at 14.48GHz with a low thickness of 2.0mm. In addition, the effective bandwidth (RL<-10dB) reaches 5.6GHz from 11.96 to 17.56GHz. The superior electromagnetic wave absorbing performance of the TiO2/RGO/Fe2O3 composites derived from the appropriate impedance matching as well as the multiple polarization effect. The results adequately demonstrate the accessibility of the prepared TiO2/RGO/Fe2O3 composites as a preeminent absorber.
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